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SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

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SRAM IS61WV25616BLL-10TLI Electronic Integrated Circuits Asynchronous 4Mb Parallel 10ns TSOP44

Model Number : IS61WV25616BLL-10TLI

Certification : Original Parts

MOQ : 1 piece

Price : Negotiation

Payment Terms : T/T, PayPal, Western Union, Escrow and others

Supply Ability : 500-2000pcs per month

Packaging Details : 10cm X 10cm X 5cm

Delivery Time : 3-5 work days

Item NO. : IS61WV25616BLL-10TLI

Memory Type : Volatile

Memory Format : SRAM

Memory Size : Memory Size

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IC CHIP SRAM IS61WV25616BLL-10TLI Memory IC Chip - Asynchronous Memory IC 4Mb Parallel 10ns TSOP44

FEATURES:

HIGH SPEED: (IS61/64WV25616ALL/BLL)

• High-speed access time: 8, 10, 20 ns

• Low Active Power: 85 mW (typical)

• Low Standby Power: 7 mW (typical) CMOS standby

LOW POWER: (IS61/64WV25616ALS/BLS)

• High-speed access time: 25, 35, 45 ns

• Low Active Power: 35 mW (typical)

• Low Standby Power: 0.6 mW (typical) CMOS standby

• Single power supply

— VDD 1.65V to 2.2V (IS61WV25616Axx)

— VDD 2.4V to 3.6V (IS61/64WV25616Bxx)

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial and Automotive temperature support

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM:

DESCRIPTION

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx

are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated usingISSI's high- performance CMOS technology. This highly reliable pro- cess coupled with innovative circuit design techniques,

yields high-performance and low power consumption de- vices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS61WV25616Axx/Bxx and IS64WV25616Bxx are packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 3.3V + 5%

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –4.0 mA 2.4 V
VOL Output LOW Voltage VDD = Min., IOL = 8.0 mA 0.4 V
VIH Input HIGH Voltage 2 VDD + 0.3 V
VIL Input LOW Voltage(1) –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 2.4V-3.6V

Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VDD = Min., IOH = –1.0 mA 1.8 V
VOL Output LOW Voltage VDD = Min., IOL = 1.0 mA 0.4 V
VIH Input HIGH Voltage 2.0 VDD + 0.3 V
VIL Input LOW Voltage(1) –0.3 0.8 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

VDD = 1.65V-2.2V

Symbol Parameter Test Conditions VDD Min. Max. Unit
VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 V
VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V 0.2 V
VIH Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V
VIL(1) Input LOW Voltage 1.65-2.2V –0.2 0.4 V
ILI Input Leakage GND £ VIN £ VDD –1 1 µA
ILO Output Leakage GND £ VOUT £ VDD, Outputs Disabled –1 1 µA

Note:

1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.

VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width < 10 ns). Not 100% tested.

AC TEST CONDITIONS

Parameter Unit Unit Unit
(2.4V-3.6V) (3.3V +10%) (1.65V-2.2V)
InputPulseLevel 0Vto3V 0Vto3V 0Vto1.8V
Input Rise and Fall Times 1V/ ns 1V/ ns 1V/ ns
InputandOutputTiming andReferenceLevel(VRef) 1.5V 1.5V 0.9V
OutputLoad See Figures 1 and 2 See Figures 1 and 2 See Figures 1 and 2

Product Tags:

integrated circuits ic

      

electronic ic chip

      
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